Materials Science Research Lecture

***Refreshments at 3:45pm in Noyes lobby

Abstract:

The advent of p-type GaN has changed the world forever – a legacy that Nagoya is proud of. To date most of the p-type GaN has been achieved by impurity doping, i.e. replacing Ga with Mg in the GaN semiconductor crystal. A few years back Chaudhuri et al [Science 2019] demonstrated that it is possible to form a 2D hole gas at the GaN/AlN interface, which arises from the discontinuity of polarization at this heterointerface. This 2D hole gas is free from dopant scattering and freeze-out, just like its counterpart – the 2DEG at an AlGaN/GaN interface. As a result, it provides an unprecedented platform for us to probe the valence band of GaN. I will present our most recent discoveries of Shubnikov-de Haas oscillation and cyclotron resonance of heavy holes and light holes, all thanks to these unique 2D hole gases.

More about the Speaker:

Huili Grace Xing is currently the William L. Quackenbush Professor of Electrical and Computer Engineering, Materials Science and Engineering at Cornell University, the Director of SUPREME - a SRC JUMP2.0 research center, and having served as the Associate Dean for Research & Graduate Studies of the College of Engineering in 2020-2022.

She is a recipient of the AFOSR Young Investigator Award, NSF CAREER Award, ISCS Young Scientist Award, and the Intel Outstanding Researcher Award, the SIA/SRC University Researcher Award, the Cornell Engineering Research Excellence Award and Michael Tien'72 Teaching Award. She is a fellow of APS, IEEE & AAAS.